收藏本站
IRS26072DSPbF
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients at
the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such
conditions, it is recommended to 1) minimize the high-side source to low-side collector distance, and 2) minimize
the low-side emitter to negative bus rail stray inductance. However, where negative V S spikes remain excessive,
further steps may be taken to reduce the spike. This includes placing a resistor (5 or less) between the V S pin
and the switch node (see Figure 22), and in some cases using a clamping diode between COM and V S (see
Figure 23). See DT04-4 at www.irf.com for more detailed information.
V B
HO
C BS
DC+ BUS
V B
HO
C BS
DC+ BUS
V S
LO
R VS
To
Load
V S
LO
R VS
D VS
To
Load
COM
DC- BUS
Figure 22: V S resistor
COM
DC- BUS
Figure 23: V S clamping diode
Integrated Bootstrap FET limitation
The integrated Bootstrap FET functionality has an operational limitation under the following bias conditions applied
to the HVIC:
?
?
VCC pin voltage = 0V AND
VS or VB pin voltage > 0
In the absence of a VCC bias, the integrated bootstrap FET voltage blocking capability is compromised and a current
conduction path is created between VCC & VB pins, as illustrated in Fig.24 below, resulting in power loss and
possible damage to the HVIC.
Figure 24: Current conduction path between VCC and VB pin
www.irf.com
21
? 2009 International Rectifier
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRS2607DSTRPBF IC DVR MOSFET/IGBT N-CH 8-SOIC
IRS2608DSTRPBF IC DRIVER MOSFET/IGBT 8-SOIC
IRS2609DSPBF IC DVR MOSFET/IGBT N-CH 8-SOIC
IRS26302DJTRPBF IC GATE DRIVER 3PH BRIDGE 44PLCC
IRS26310DJTRPBF IC DRIVER MOSFET/IGBT 44-PLCC
IRS4427PBF IC MOSFET DRIVER
IRS4427SPBF IC DVR LOW SIDE DUAL 8-SOIC
IRS4428STRPBF IC DVR LOW SIDE DUAL 8-SOIC
相关代理商/技术参数
IRS26072DSPBF_11 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER
IRS26072DSTRPBF 功能描述:功率驱动器IC Hlf-Brdg Drvr IC motion Cntrl IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2607DSPBF 功能描述:功率驱动器IC 600V High Low 10 to 20V 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2607DSPBF 制造商:International Rectifier 功能描述:DRIVER
IRS2607DSTRPBF 功能描述:功率驱动器IC Half Bridge Drvr Hi Volt & Hi Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2608DSPBF 功能描述:功率驱动器IC 600V Half-Bridge 10 to 20V 530ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2608DSPBF_1 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER
IRS2608DSTRPBF 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Compl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube